A great deal of his work was in studying such crystalline structures as rock salt and zincblende, an ore from which zinc is extracted.
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A zincblende unit cell The space group of the Zincblende structure is called F3m (in Hermann–Mauguin notation), or 216.Birkbeck College, University of London The Strukturbericht designation is "B3".The Zincblende (B3) Structure The Zincblende structure (also written "zinc blende") is named after the mineral zincblende (sphalerite), one form of zinc sulfide (β-ZnS). As in the rock-salt structure, the two atom types form two interpenetrating face-centered cubic lattices.
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A zincblende unit cell Hg1−xCdxTe has a zincblende structure with two interpenetrating face-centered cubic lattices offset by (1/4,1/4,1/4)ao in the primitive cell. The cations Cd are Hg statistically mixed on the yellow sublattice while the Te anions form the grey sublattice in the image.
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Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
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The other binary chalcogenides, and , have the zincblende structure. They are all semiconductors but are easily hydrolysed and have limited utility.
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Zinc oxide crystallizes in two main forms, hexagonal wurtzite and cubic zincblende. The wurtzite structure is most stable at ambient conditions and thus most common. The zincblende form can be stabilized by growing ZnO on substrates with cubic lattice structure. In both cases, the zinc and oxide centers are tetrahedral, the most characteristic geometry for Zn(II).
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However, it differs from rock-salt structure in how the two lattices are positioned relative to one another. The zincblende structure has tetrahedral coordination: Each atom's nearest neighbors consist of four atoms of the opposite type, positioned like the four vertices of a regular tetrahedron. Altogether, the arrangement of atoms in zincblende structure is the same as diamond cubic structure, but with alternating types of atoms at the different lattice sites. Examples of compounds with this structure include zincblende itself, lead(II) nitrate, many compound semiconductors (such as gallium arsenide and cadmium telluride), and a wide array of other binary compounds.
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It is recommended that polymorphs are identified, (e.g. for ZnS where the two forms zincblende (cubic) and wurtzite (hexagonal))as ZnS(c) and ZnS(h) respectively.
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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
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A piezoelectric potential can be created in any bulk or nanostructured semiconductor crystal having non central symmetry, such as the Group III–V and II–VI materials, due to polarization of ions under applied stress and strain. This property is common to both the zincblende and wurtzite crystal structures. To first order, there is only one independent piezoelectric coefficient in zincblende, called e14, coupled to shear components of the strain. In wurtzite, there are instead three independent piezoelectric coefficients: e31, e33 and e15.
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CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from 1045 °C for x=0 to 805 °C for x=1.
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ZnO converts to the rocksalt motif at relatively high pressures about 10 GPa. The many remarkable medical properties of creams containing ZnO can be explained by its elastic softness, which is characteristic of tetrahedral coordinated binary compounds close to the transition to octahedral structures. Hexagonal and zincblende polymorphs have no inversion symmetry (reflection of a crystal relative to any given point does not transform it into itself). This and other lattice symmetry properties result in piezoelectricity of the hexagonal and zincblende ZnO, and pyroelectricity of hexagonal ZnO. The hexagonal structure has a point group 6 mm (Hermann-Mauguin notation) or C6v (Schoenflies notation), and the space group is P63mc or C6v4.
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Since the term 'blackjack' also refers to the mineral zincblende, which was often associated with gold or silver deposits, he suggests that the name was transferred by prospectors to the top bonus in the game. He was unable to find any historical evidence for a special bonus for having the combination of an Ace with a black Jack.
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Wurtzite and zincblende structures characterize most wide bandgap semiconductors. Wurtzite phases allow spontaneous polarization in the (0001) direction. A result of the spontaneous polarization and piezoelectricity is that the polar surfaces of the materials are associated with higher sheet carrier density than the bulk. The polar face produces a strong electric field, which creates high interface charge densities.
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In its compounds, Zn2+ ions have an electronic configuration [Ar] 3d10. As such, its complexes tend to be symmetrical, ZnO and zinc sulfide, ZnS, (zincblende) in which the oxide and sulfide ions are tetrahedrally bound to four zinc ions. Many complexes, such as ZnCl42−, are tetrahedral. Tetrahedrally coordinated zinc is found in metallo-enzymes such as carbonic anhydrase.
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Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order (or higher) piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms (first order).
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A zincblende unit cell AlGaInP's structure is categorized within a specific unit cell called the zinc blende structure. Zinc blende/sphalerite is based on a FCC lattice of anions. It has 4 asymmetric units in its unit cell. It is best thought of as a face-centered cubic array of anions and cations occupying one half of the tetrahedral holes.
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In the theory of crystal lattice dynamics this model is now known as Tolpygo model, a model of deformable ions, or a "shell model".Upadhyay G. K. "Solid State Physics (Lattice Dynamics of Ionic Solids)", Laxmi Publication Ltd, New Delhi, 1st Edition: 2008, p37.Kaplan H. and Sullivan J. J. "Lattice Vibrations of Zincblende Structure Crystals." Phys. Rev. 130, 120–129 (1963).
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The pit lies in the southern part of the Central Black Forest, immediately south of the 1,284-metre-high peak of Schauinsland. There are numerous lodes which descend very steeply from east to west and run largely parallel to the Upper Rhine Graben. The lodes are formed from quartz, baryte and carbonate and contain exploitable quantities of zincblende and galena. The host rocks are gneisses and migmatites.
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The Wurtzite structure, showing the tetrahedral environment of both Zn and S atoms a unit cell of zincblende Zinc oxide, ZnO, is the most important manufactured compound of zinc, with a wide variety of uses. It crystallizes with the Wurtzite structure. It is amphoteric, dissolving in acids to give the aqueous Zn2+ ion and in alkali to give the zincate (a.k.a. tetrahydroxozincate) ion, [Zn(OH)4]2−.
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Zinc hydroxide, Zn(OH)2 is also amphoteric. Zinc sulfide, ZnS, crystallizes in two closely related structures, the zincblende crystal structure and the Wurtzite crystal structure, which are common structures of compounds with the formula MA. Both Zn and S are tetrahedrally coordinated by the other ion. A useful property of ZnS is its phosphorescence. The other chalcogenides, ZnSe and ZnTe, have applications in electronics and optics.
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ZnSe can be made in both hexagonal (wurtzite) and cubic (zincblende) crystal structure. It is a wide-bandgap semiconductor of the II-VI semiconductor group (since zinc and selenium belong to the 12th and 16th groups of the periodic table, respectively). The material can be doped n-type doping with, for instance, halogen elements. P-type doping is more difficult, but can be achieved by introducing gallium.
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Examples of this are the I-IV2-V3 CuGe2P3 compound which has a zincblende structure. Compounds or phases that obey the Grimm–Sommerfeld rule are termed Grimm–Sommerfeld compounds or phases.Concise Encyclopedia Chemistry, Mary Eagleson, Walter de Gruyter, 1994 The rule has also been extended to predict bond lengths in Grimm–Sommerfeld compounds. When the sum of the atomic numbers is the same the bond lengths are the same.
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BeO is amphoteric. Beryllium sulfide, selenide and telluride are known, all having the zincblende structure. Beryllium nitride, Be3N2 is a high-melting-point compound which is readily hydrolyzed. Beryllium azide, BeN6 is known and beryllium phosphide, Be3P2 has a similar structure to Be3N2. A number of beryllium borides are known, such as Be5B, Be4B, Be2B, BeB2, BeB6 and BeB12. Beryllium carbide, Be2C, is a refractory brick-red compound that reacts with water to give methane.
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II-VI semiconductor compounds are compounds composed of a metal from either group 2 or 12 of the periodic table (the alkaline earth metals and group 12 elements, formerly called groups IIA and IIB) and a nonmetal from group 16 (the chalcogens, formerly called group VI). These semiconductors crystallize either in the zincblende lattice structure or the wurtzite crystal structure. They generally exhibit large band gaps, making them popular for short wavelength applications in optoelectronics.
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STM images of the ZnTe(110) surface, taken at different resolutions and sample rotation, together with its atomic model. ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride typically had a cubic (sphalerite, or "zincblende") crystal structure, but can be also prepared as rocksalt crystals or in hexagonal crystals (wurtzite structure). Irradiated by a strong optical beam burns in presence of oxygen.
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This method is highly dependent on the materials as well as the growth techniques. In particular, materials with very different lattice constants or different crystal phases (wurtzite or zincblende in this case) are difficult to combine. Tensions and impurities due to low crystal quality result in low optoelectronic properties. One example of the basic possibilities achievable with three different compounds is shown in the diagram with zinc oxide (ZnO), cadmium oxide (CdO) and magnesium oxide (MgO).
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Non linear piezoelectric effects in polar semiconductors were first reported in 2006 by G.Bester et al. and by M.A. Migliorato et al., in relation to zincblende GaAs and InAs. Different methods were used in the seminal papers and while the influence of second (and third) order piezoelectric coefficients was generally recognized as being comparable to first order, fully ab initio and what is currently known as Harrison's model, appeared to predict slightly different results, particularly for the magnitude of the first order coefficients.
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The lattice describes the repeat pattern; for diamond cubic crystals this lattice is "decorated" with a motif of two tetrahedrally bonded atoms in each primitive cell, separated by of the width of the unit cell in each dimension.. The diamond lattice can be viewed as a pair of intersecting face-centered cubic lattices, with each separated by of the width of the unit cell in each dimension. Many compound semiconductors such as gallium arsenide, β-silicon carbide, and indium antimonide adopt the analogous zincblende structure, where each atom has nearest neighbors of an unlike element. Zincblende's space group is F3m, but many of its structural properties are quite similar to the diamond structure.. The atomic packing factor of the diamond cubic structure (the proportion of space that would be filled by spheres that are centered on the vertices of the structure and are as large as possible without overlapping) is ≈ 0.34,. significantly smaller (indicating a less dense structure) than the packing factors for the face- centered and body-centered cubic lattices.. Zincblende structures have higher packing factors than 0.34 depending on the relative sizes of their two component atoms.
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Many compound semiconductors, e.g. those combining elements from groups III and V or from groups II and VI of the periodic table, crystallize in the fcc zincblende or hcp wurtzite crystal structures. In a semiconductor crystal, the fcc and hcp phases of a given material will usually have different band gap energies. As a consequence, when the crystal phase of a stacking fault has a lower band gap than the surrounding phase, it forms a quantum well, which in photoluminescence experiments leads to light emission at lower energies (longer wavelengths) than for the bulk crystal.
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The most common nanoscale heterostructure system is ZnS on CdSe (CdSe@ZnS) which has a straddling gap (type I) offset. In this system the much larger band gap ZnS passivates the surface of the fluorescent CdSe core thereby increasing the quantum efficiency of the luminescence. There is an added bonus of increased thermal stability due to the stronger bonds in the ZnS shell as suggested by its larger band gap. Since CdSe and ZnS both grow in the zincblende crystal phase and are closely lattice matched, core shell growth is preferred.
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It has been asserted that chemical precipitation methods result in the cubic zincblende form.Paul Klocek (1991), Handbook of Infrared Optical Materials, CRC Press Pigment production usually involves the precipitation of CdS, the washing of the solid precipitate to remove soluble cadmium salts followed by calcination (roasting) to convert it to the hexagonal form followed by milling to produce a powder. When cadmium sulfide selenides are required the CdSe is co- precipitated with CdS and the cadmium sulfoselenide is created during the calcination step. Cadmium sulfide is sometimes associated with sulfate reducing bacteria.
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In 2005, he and coauthors proved a diffusion-induced character of gold- assisted vapor-liquid-solid (VLS) growth of GaAs nanowires by molecular beam epitaxy [1]. In 2008-2014, following Frank Glas [2], he developed theoretical approaches for understanding and controlling polytypism of III-V nanowires by the growth parameter tuning [3] and catalyst material [4]. This allowed achieving record small GaAs nanowires (down to 5 nm in radius) with pure zincblende structure [5]. Independently of Jerry Tersoff [6], in 2013-2015 he predicted a non-linear focusing effect [7,8] that enabled self-organized ensembles of GaAs nanowires with uniform radii [8].
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Copper(I) chloride has the cubic zincblende crystal structure at ambient conditions. Upon heating to 408 °C the structure changes to hexagonal. Several other crystalline forms of CuCl appear at high pressures (several GPa). Copper(I) chloride is a Lewis acid, which is classified as soft according to the Hard-Soft Acid-Base concept. Thus, it forms a series of complexes with soft Lewis bases such as triphenylphosphine: : CuCl + 1 P(C6H5)3 → 1/4 {CuCl[P(C6H5)3]}4 : CuCl + 2 P(C6H5)3 → CuCl[P(C6H5)3)]2 : CuCl + 3 P(C6H5)3 → CuCl[P(C6H5)3)]3 Although CuCl is insoluble in water, it dissolves in aqueous solutions containing suitable donor molecules.
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Known to the ancient Greeks as ἀδάμας – adámas ("proper", "unalterable", "unbreakable") and sometimes called adamant, diamond is the hardest known naturally occurring material, and serves as the definition of 10 on the Mohs scale of mineral hardness. Diamond is extremely strong owing to its crystal structure, known as diamond cubic, in which each carbon atom has four neighbors covalently bonded to it. Bulk cubic boron nitride (c-BN) is nearly as hard as diamond. Diamond reacts with some materials, such as steel, and c-BN wears less when cutting or abrading them. (Its zincblende structure is like the diamond cubic structure, but with alternating types of atoms.) A currently hypothetical material, beta carbon nitride (β-C3N4), may also be as hard or harder in one form.
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One such bonus was a ten-to-one payout if the player's hand consisted of the ace of spades and a black jack (either the jack of clubs or the jack of spades). This hand was called a "blackjack", and it is claimed that the name stuck to the game even though the ten-to-one bonus was soon withdrawn. French card historian, Thierry Depaulis has recently debunked this story, showing that the name Blackjack was first given to the game of American Vingt-Un by prospectors during the Klondike Gold Rush (1896–99), the bonus being the usual Ace and any 10-point card. Since the term 'blackjack' also refers to the mineral zincblende, which was often associated with gold or silver deposits, he suggests that the mineral name was transferred by prospectors to the top bonus in the game.
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